Beta
⌘K
DIODE SIL CARBIDE 1.2KV 8A TO257
| Part | Package / Case | Current - Average Rectified (Io) | Capacitance @ Vr, F | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Technology | Supplier Device Package | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | TO-257-3 | 8 A | 237 pF | Through Hole | 1.2 kV | -55 °C | 250 °C | 1.6 V | 10 µA | 0 ns | SiC (Silicon Carbide) Schottky | TO-257 | No Recovery Time |