GD25Q16CNIGR

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GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8USON

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DocumentsProduct Selection Guide 2023 Datasheet

GD25Q16CNIGR

Unknown

GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8USON

Deep-Dive with AI

DocumentsProduct Selection Guide 2023 Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	GD25Q16CNIGR

Clock Frequency	120 MHz
Memory Format	FLASH
Memory Interface	SPI - Quad I/O
Memory Organization	2 M
Memory Size	16 Mb
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-UDFN Exposed Pad
Supplier Device Package	8-USON (4x3)
Technology	FLASH - NOR
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page [custom]	50 µs
Write Cycle Time - Word, Page [custom]	2.4 ms

GD25Q16 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Memory Format	Memory Organization	Package / Case	Package / Case [y]	Package / Case [x]	Memory Type	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Clock Frequency	Access Time	Memory Interface	Memory Size	Supplier Device Package
GigaDevice Semiconductor (HK) Limited GD25Q16ETJGR	105 °C	-40 °C	FLASH - NOR (SLC)	FLASH	2 M	8-SOIC	3.9 mm	0.154 in	Non-Volatile	140 µs	4 ms	Surface Mount	2.7 V	3.6 V	133 MHz	7 ns	SPI - Quad I/O	16 Mb	8-SOP
GigaDevice Semiconductor (HK) Limited GD25Q16ETEGR	125 °C	-40 °C	FLASH - NOR (SLC)	FLASH	2 M	8-SOIC	3.9 mm	0.154 in	Non-Volatile	140 µs	4 ms	Surface Mount	2.7 V	3.6 V	133 MHz	7 ns	SPI - Quad I/O	16 Mb	8-SOP
GigaDevice Semiconductor (HK) Limited GD25Q16CNIGR	85 °C	-40 °C	FLASH - NOR	FLASH	2 M	8-UDFN Exposed Pad			Non-Volatile	50 µs	2.4 ms	Surface Mount	2.7 V	3.6 V	120 MHz		SPI - Quad I/O	16 Mb	8-USON (4x3)
GigaDevice Semiconductor (HK) Limited GD25Q16CWIGR	85 °C	-40 °C	FLASH - NOR	FLASH	2 M	8-WDFN Exposed Pad			Non-Volatile	50 µs	2.4 ms	Surface Mount	2.7 V	3.6 V	120 MHz		SPI - Quad I/O	16 Mb	8-WSON (5x6)
GigaDevice Semiconductor (HK) Limited GD25Q16EQIGR	85 °C	-40 °C	FLASH - NOR (SLC)	FLASH	2 M	8-XDFN Exposed Pad			Non-Volatile	70 µs	2 ms	Surface Mount	2.7 V	3.6 V	133 MHz	7 ns	SPI - Quad I/O	16 Mb	8-USON (4x4)
GigaDevice Semiconductor (HK) Limited GD25Q16CSJG	105 °C	-40 °C	FLASH - NOR	FLASH	2 M	8-SOIC	5.3 mm	0.209 "	Non-Volatile	50 µs	2.4 ms	Surface Mount	2.7 V	3.6 V	120 MHz		SPI - Quad I/O	16 Mb	8-SOP
GigaDevice Semiconductor (HK) Limited GD25Q16CTIGR	85 °C	-40 °C	FLASH - NOR	FLASH	2 M	8-SOIC	3.9 mm	0.154 in	Non-Volatile	50 µs	2.4 ms	Surface Mount	2.7 V	3.6 V	120 MHz		SPI - Quad I/O	16 Mb	8-SOP
GigaDevice Semiconductor (HK) Limited GD25Q16EEJGR	105 °C	-40 °C	FLASH - NOR (SLC)	FLASH	2 M	8-XFDFN Exposed Pad			Non-Volatile	140 µs	4 ms	Surface Mount	2.7 V	3.6 V	133 MHz	7 ns	SPI - Quad I/O	16 Mb	8-USON (3x2)
GigaDevice Semiconductor (HK) Limited GD25Q16CSIG	85 °C	-40 °C	FLASH - NOR	FLASH	2 M	8-SOIC	5.3 mm	0.209 "	Non-Volatile	50 µs	2.4 ms	Surface Mount	2.7 V	3.6 V	120 MHz		SPI - Quad I/O	16 Mb	8-SOP
GigaDevice Semiconductor (HK) Limited GD25Q16ESJGR	105 °C	-40 °C	FLASH - NOR (SLC)	FLASH	2 M	8-SOIC	5.3 mm	0.209 "	Non-Volatile	140 µs	4 ms	Surface Mount	2.7 V	3.6 V	133 MHz	7 ns	SPI - Quad I/O	16 Mb	8-SOP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

GD25Q16 Series

FLASH - NOR Memory IC 16Mbit SPI - Quad I/O 120 MHz 8-USON (4x3)

Documents

Technical documentation and resources

Product Selection Guide 2023

Datasheet