IC FLASH 16MBIT SPI/QUAD 8SOP
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Memory Format | Memory Organization | Package / Case | Package / Case [y] | Package / Case [x] | Memory Type | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Mounting Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Clock Frequency | Access Time | Memory Interface | Memory Size | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 105 °C | -40 °C | FLASH - NOR (SLC) | FLASH | 2 M | 8-SOIC | 3.9 mm | 0.154 in | Non-Volatile | 140 µs | 4 ms | Surface Mount | 2.7 V | 3.6 V | 133 MHz | 7 ns | SPI - Quad I/O | 16 Mb | 8-SOP |
GigaDevice Semiconductor (HK) Limited | 125 °C | -40 °C | FLASH - NOR (SLC) | FLASH | 2 M | 8-SOIC | 3.9 mm | 0.154 in | Non-Volatile | 140 µs | 4 ms | Surface Mount | 2.7 V | 3.6 V | 133 MHz | 7 ns | SPI - Quad I/O | 16 Mb | 8-SOP |
GigaDevice Semiconductor (HK) Limited | 85 °C | -40 °C | FLASH - NOR | FLASH | 2 M | 8-UDFN Exposed Pad | Non-Volatile | 50 µs | 2.4 ms | Surface Mount | 2.7 V | 3.6 V | 120 MHz | SPI - Quad I/O | 16 Mb | 8-USON (4x3) | |||
GigaDevice Semiconductor (HK) Limited | 85 °C | -40 °C | FLASH - NOR | FLASH | 2 M | 8-WDFN Exposed Pad | Non-Volatile | 50 µs | 2.4 ms | Surface Mount | 2.7 V | 3.6 V | 120 MHz | SPI - Quad I/O | 16 Mb | 8-WSON (5x6) | |||
GigaDevice Semiconductor (HK) Limited | 85 °C | -40 °C | FLASH - NOR (SLC) | FLASH | 2 M | 8-XDFN Exposed Pad | Non-Volatile | 70 µs | 2 ms | Surface Mount | 2.7 V | 3.6 V | 133 MHz | 7 ns | SPI - Quad I/O | 16 Mb | 8-USON (4x4) | ||
GigaDevice Semiconductor (HK) Limited | 105 °C | -40 °C | FLASH - NOR | FLASH | 2 M | 8-SOIC | 5.3 mm | 0.209 " | Non-Volatile | 50 µs | 2.4 ms | Surface Mount | 2.7 V | 3.6 V | 120 MHz | SPI - Quad I/O | 16 Mb | 8-SOP | |
GigaDevice Semiconductor (HK) Limited | 85 °C | -40 °C | FLASH - NOR | FLASH | 2 M | 8-SOIC | 3.9 mm | 0.154 in | Non-Volatile | 50 µs | 2.4 ms | Surface Mount | 2.7 V | 3.6 V | 120 MHz | SPI - Quad I/O | 16 Mb | 8-SOP | |
GigaDevice Semiconductor (HK) Limited | 105 °C | -40 °C | FLASH - NOR (SLC) | FLASH | 2 M | 8-XFDFN Exposed Pad | Non-Volatile | 140 µs | 4 ms | Surface Mount | 2.7 V | 3.6 V | 133 MHz | 7 ns | SPI - Quad I/O | 16 Mb | 8-USON (3x2) | ||
GigaDevice Semiconductor (HK) Limited | 85 °C | -40 °C | FLASH - NOR | FLASH | 2 M | 8-SOIC | 5.3 mm | 0.209 " | Non-Volatile | 50 µs | 2.4 ms | Surface Mount | 2.7 V | 3.6 V | 120 MHz | SPI - Quad I/O | 16 Mb | 8-SOP | |
GigaDevice Semiconductor (HK) Limited | 105 °C | -40 °C | FLASH - NOR (SLC) | FLASH | 2 M | 8-SOIC | 5.3 mm | 0.209 " | Non-Volatile | 140 µs | 4 ms | Surface Mount | 2.7 V | 3.6 V | 133 MHz | 7 ns | SPI - Quad I/O | 16 Mb | 8-SOP |