1N5406GH

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO201AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	1N5406GH

Capacitance @ Vr, F	25 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Qualification	AEC-Q101
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Grade	Mounting Type	Qualification	Current - Reverse Leakage @ Vr	Supplier Device Package	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Package / Case	Technology
Taiwan Semiconductor Corporation 1N5406GH	Automotive	Through Hole	AEC-Q101	5 µA	DO-201AD	3 A	150 °C	-55 °C	Standard Recovery >500ns	200 mA	1 V	600 V	25 pF	DO-201AD Axial	Standard
Taiwan Semiconductor Corporation 1N5406G A0G		Through Hole		5 µA	DO-201AD	3 A	150 °C	-55 °C	Standard Recovery >500ns	200 mA	1 V	600 V	25 pF	DO-201AD Axial	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 3A Through Hole DO-201AD

Technical documentation and resources