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DIODE GEN PURP 600V 3A DO201AD
| Part | Grade | Mounting Type | Qualification | Current - Reverse Leakage @ Vr | Supplier Device Package | Current - Average Rectified (Io) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Speed | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Package / Case | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Automotive | Through Hole | AEC-Q101 | 5 µA | DO-201AD | 3 A | 150 °C | -55 °C | Standard Recovery >500ns | 200 mA | 1 V | 600 V | 25 pF | DO-201AD Axial | Standard |
Taiwan Semiconductor Corporation | Through Hole | 5 µA | DO-201AD | 3 A | 150 °C | -55 °C | Standard Recovery >500ns | 200 mA | 1 V | 600 V | 25 pF | DO-201AD Axial | Standard |