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MURT40020 - Three Tower

MURT40020

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GeneSiC Semiconductor

DIODE MODULE GP 200V 200A 3TOWER

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MURT40020 - Three Tower

MURT40020

Active
GeneSiC Semiconductor

DIODE MODULE GP 200V 200A 3TOWER

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMURT40020
Current - Average Rectified (Io) (per Diode)200 A
Diode Configuration1 Pair Common Cathode
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseThree Tower
Reverse Recovery Time (trr)125 ns
Speed200 mA, 500 ns
Supplier Device PackageThree Tower
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 80$ 110.13

Description

General part information

MURT400 Series

Diode Array 1 Pair Common Cathode 200 V 200A Chassis Mount Three Tower

Documents

Technical documentation and resources