
MURT40020
ActiveGeneSiC Semiconductor
DIODE MODULE GP 200V 200A 3TOWER
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MURT40020
ActiveGeneSiC Semiconductor
DIODE MODULE GP 200V 200A 3TOWER
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MURT40020 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 200 A |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | Three Tower |
| Reverse Recovery Time (trr) | 125 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | Three Tower |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 80 | $ 110.13 | |
Description
General part information
MURT400 Series
Diode Array 1 Pair Common Cathode 200 V 200A Chassis Mount Three Tower
Documents
Technical documentation and resources