DIODE MODULE GP 100V 200A 3TOWER
| Part | Mounting Type | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) (per Diode) | Diode Configuration | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Speed | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Chassis Mount | Three Tower | 1.3 V | 100 V | 200 A | 1 Pair Common Cathode | Three Tower | 150 °C | -55 °C | 125 ns | 200 mA 500 ns | Standard |
GeneSiC Semiconductor | Chassis Mount | Three Tower | 1.7 V | 600 V | 200 A | 1 Pair Common Cathode | Three Tower | 150 °C | -55 °C | 240 ns | 200 mA 500 ns | Standard |
GeneSiC Semiconductor | Chassis Mount | Three Tower | 1.3 V | 200 V | 200 A | 1 Pair Common Cathode | Three Tower | 150 °C | -55 °C | 125 ns | 200 mA 500 ns | Standard |
GeneSiC Semiconductor | Chassis Mount | Three Tower | 1.3 V | 50 V | 200 A | 1 Pair Common Cathode | Three Tower | 150 °C | -55 °C | 125 ns | 200 mA 500 ns | Standard |
GeneSiC Semiconductor | Chassis Mount | Three Tower | 1.3 V | 200 V | 200 A | 1 Pair Common Anode | Three Tower | 150 °C | -55 °C | 125 ns | 200 mA 500 ns | Standard |
GeneSiC Semiconductor | Chassis Mount | Three Tower | 1.7 V | 600 V | 200 A | 1 Pair Common Anode | Three Tower | 150 °C | -55 °C | 240 ns | 200 mA 500 ns | Standard |