
SGF80N60UFTU
ActiveON Semiconductor
DISCRETE, HIGH PERFORMANCE IGBT
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SGF80N60UFTU
ActiveON Semiconductor
DISCRETE, HIGH PERFORMANCE IGBT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SGF80N60UFTU |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 220 A |
| Gate Charge | 175 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-3P-3 Full Pack |
| Power - Max [Max] | 110 W |
| Supplier Device Package | TO-3PF |
| Switching Energy | 590 µJ, 570 µJ |
| Td (on/off) @ 25°C | 23 ns |
| Td (on/off) @ 25°C | 90 ns |
| Test Condition [custom] | 40 A |
| Test Condition [custom] | 300 V, 15 V |
| Test Condition [custom] | 5 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.6 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 59 | $ 5.15 | |
Description
General part information
SGF80N60UF Series
ON Semiconductor's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
Documents
Technical documentation and resources