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SGF80N60UFTU - 2SK4221

SGF80N60UFTU

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ON Semiconductor

DISCRETE, HIGH PERFORMANCE IGBT

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SGF80N60UFTU - 2SK4221

SGF80N60UFTU

Active
ON Semiconductor

DISCRETE, HIGH PERFORMANCE IGBT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSGF80N60UFTU
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)220 A
Gate Charge175 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-3P-3 Full Pack
Power - Max [Max]110 W
Supplier Device PackageTO-3PF
Switching Energy590 µJ, 570 µJ
Td (on/off) @ 25°C23 ns
Td (on/off) @ 25°C90 ns
Test Condition [custom]40 A
Test Condition [custom]300 V, 15 V
Test Condition [custom]5 Ohm
Vce(on) (Max) @ Vge, Ic2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 59$ 5.15

Description

General part information

SGF80N60UF Series

ON Semiconductor's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.

Documents

Technical documentation and resources