SGF80N60UF Series

Discrete, High Performance IGBT

Catalog

Discrete, High Performance IGBT

Part	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	Supplier Device Package	Current - Collector Pulsed (Icm)	Power - Max [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Gate Charge
ON Semiconductor SGF80N60UFTU-ON
ON Semiconductor SGF80N60UFTU	23 ns	90 ns	2.6 V	-55 °C	150 °C	Through Hole	600 V	570 µJ 590 µJ	40 A	15 V 300 V	5 Ohm	TO-3PF	220 A	110 W	TO-3P-3 Full Pack	80 A	175 nC

Catalog

Discrete, High Performance IGBT

Key Features

• High speed switching

• Low saturation voltage: VCE(sat) = 2.1V @ IC= 40A

• High input impedance

Description

ON Semiconductor's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.