2SK2544(F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 6A TO220AB

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 6A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2544(F)

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	1.25 Ohm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Supplier Device Package	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
Toshiba Semiconductor and Storage 2SK2544(F)	10 V	N-Channel	TO-220-3	1300 pF	30 nC	150 °C	TO-220AB	30 V	Through Hole	6 A	MOSFET (Metal Oxide)	1.25 Ohm	600 V	80 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 6A (Ta) 80W (Tc) Through Hole TO-220AB

Technical documentation and resources