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MOSFET N-CH 600V 6A TO220AB
| Part | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Supplier Device Package | Vgs (Max) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Technology | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 10 V | N-Channel | TO-220-3 | 1300 pF | 30 nC | 150 °C | TO-220AB | 30 V | Through Hole | 6 A | MOSFET (Metal Oxide) | 1.25 Ohm | 600 V | 80 W |