TLP759F(D4IMF4,J,F

Obsolete

Toshiba Semiconductor and Storage

PHOTOCOUPLER

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

PHOTOCOUPLER

Technical Specifications

Parameters and characteristics for this part

Specification	TLP759F(D4IMF4,J,F

Current - DC Forward (If) (Max) [Max]	25 mA
Current Transfer Ratio (Min) [Min]	20 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Supplier Device Package	8-DIP
Voltage - Forward (Vf) (Typ)	1.65 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - DC Forward (If) (Max) [Max]	Number of Channels	Voltage - Forward (Vf) (Typ)	Current Transfer Ratio (Min) [Min]	Mounting Type	Input Type	Package / Case	Package / Case	Package / Case	Current - Output / Channel [custom]	Current Transfer Ratio (Max)
Toshiba Semiconductor and Storage TLP759F(D4IMF4,J,F	100 °C	-55 °C	8-DIP	25 mA	1	1.65 V	20 %	Through Hole	DC	0.3 in	8-DIP	7.62 mm
Toshiba Semiconductor and Storage TLP759(D4-TP4,J,F)	100 °C	-55 °C	8-SMD	25 mA	1	1.65 V	20 %	Surface Mount	DC				8 mA
Toshiba Semiconductor and Storage TLP759(IGM-LF5,J,F	100 °C	-55 °C	8-SMD	25 mA	1	1.65 V		Surface Mount	DC				8 mA	75 %
Toshiba Semiconductor and Storage TLP759F(D4MBIMT4JF	100 °C	-55 °C	8-DIP	25 mA	1	1.65 V	20 %	Through Hole	DC	0.3 in	8-DIP	7.62 mm
Toshiba Semiconductor and Storage TLP759F(D4-TP4,J,F	100 °C	-55 °C	8-SMD	25 mA	1	1.65 V	20 %	Surface Mount	DC
Toshiba Semiconductor and Storage TLP759(FANUC1T1J,F	100 °C	-55 °C	8-DIP	25 mA	1	1.65 V	20 %	Through Hole	DC	0.3 in	8-DIP	7.62 mm	8 mA
Toshiba Semiconductor and Storage TLP759F(D4MBIM,J,F	100 °C	-55 °C	8-DIP	25 mA	1	1.65 V	20 %	Through Hole	DC	0.3 in	8-DIP	7.62 mm
Toshiba Semiconductor and Storage TLP759(D4-IGM,J,F)	100 °C	-55 °C	8-DIP	25 mA	1	1.65 V		Through Hole	DC	0.3 in	8-DIP	7.62 mm	8 mA	75 %
Toshiba Semiconductor and Storage TLP759F(MATDIGMJ,F	100 °C	-55 °C	8-DIP	25 mA	1	1.65 V	20 %	Through Hole	DC	0.3 in	8-DIP	7.62 mm
Toshiba Semiconductor and Storage TLP759F(D4,J,F)	100 °C	-55 °C	8-DIP	25 mA	1	1.65 V	20 %	Through Hole	DC	0.3 in	8-DIP	7.62 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Optoisolator Transistor with Base Output 5000Vrms 1 Channel 8-DIP

Technical documentation and resources

No documents available