MSRTA600120A

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GeneSiC Semiconductor

DIODE MODULE GP 1.2KV 3TOWER

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GeneSiC Semiconductor

DIODE MODULE GP 1.2KV 3TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MSRTA600120A

Current - Average Rectified (Io) (per Diode)	600 A
Current - Reverse Leakage @ Vr	25 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	3-SMD Module
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Three Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Supplier Device Package	Speed	Speed	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr	Mounting Type	Diode Configuration	Technology	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor MSRTA600120A	Three Tower	Standard Recovery >500ns	200 mA	600 A	1.2 kV	150 °C	-55 °C	3-SMD Module	25 µA	Chassis Mount	1 Pair Common Cathode	Standard	1.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	25	$ 99.26

General part information

Diode Array 1 Pair Common Cathode 1200 V 600A (DC) Chassis Mount 3-SMD Module

Technical documentation and resources

No documents available