DIODE MODULE GP 1.2KV 3TOWER
| Part | Supplier Device Package | Speed | Speed | Current - Average Rectified (Io) (per Diode) | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Current - Reverse Leakage @ Vr | Mounting Type | Diode Configuration | Technology | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Three Tower | Standard Recovery >500ns | 200 mA | 600 A | 1.2 kV | 150 °C | -55 °C | 3-SMD Module | 25 µA | Chassis Mount | 1 Pair Common Cathode | Standard | 1.2 V |