UF4002 TR TIN/LEAD

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Central Semiconductor Corp

DIODE GEN PURP 100V 1A DO41

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Central Semiconductor Corp

DIODE GEN PURP 100V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	UF4002 TR TIN/LEAD

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Package / Case	Current - Reverse Leakage @ Vr	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package
Central Semiconductor Corp UF4002 TR TIN/LEAD	1 V	150 °C	-65 C	Standard	Axial DO-204AL DO-41	10 µA	Through Hole	1 A	50 ns	20 pF	200 mA 500 ns	100 V	DO-41
Central Semiconductor Corp UF4002 TR	1 V	150 °C	-65 C	Standard	Axial DO-204AL DO-41	10 µA	Through Hole	1 A	50 ns	20 pF	200 mA 500 ns	100 V	DO-41

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General part information

Diode 100 V 1A Through Hole DO-41

Technical documentation and resources