UT6K3TCR1

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Rohm Semiconductor

MOSFET 2N-CH 30V 5.5A HUML2020L8

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Rohm Semiconductor

MOSFET 2N-CH 30V 5.5A HUML2020L8

Technical Specifications

Parameters and characteristics for this part

Specification	UT6K3TCR1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	4 nC
Input Capacitance (Ciss) (Max) @ Vds	450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerUDFN
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	HUML2020L8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature	Configuration	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]
Rohm Semiconductor UT6K3TCR1	30 V	150 °C	2 N-Channel (Dual)	Surface Mount	5.5 A	42 mOhm	1.5 V	MOSFET (Metal Oxide)	8-PowerUDFN	HUML2020L8	450 pF	4 nC	2 W

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General part information

Mosfet Array 30V 5.5A (Ta) 2W (Ta) Surface Mount HUML2020L8

Technical documentation and resources

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