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MOSFET 2N-CH 30V 5.5A HUML2020L8
| Part | Drain to Source Voltage (Vdss) | Operating Temperature | Configuration | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Package / Case | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 30 V | 150 °C | 2 N-Channel (Dual) | Surface Mount | 5.5 A | 42 mOhm | 1.5 V | MOSFET (Metal Oxide) | 8-PowerUDFN | HUML2020L8 | 450 pF | 4 nC | 2 W |