DMA80IM1600HB

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IXYS

DIODE GEN PURP 1.6KV 80A TO247

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IXYS

DIODE GEN PURP 1.6KV 80A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	DMA80IM1600HB

Capacitance @ Vr, F	43 pF
Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-247 (IXTH)
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.17 V

Part	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Capacitance @ Vr, F	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology	Supplier Device Package	Package / Case
IXYS DMA80IM1600HB	Standard Recovery >500ns	200 mA	150 °C	-55 °C	Through Hole	43 pF	80 A	40 µA	1.17 V	Standard	TO-247 (IXTH)	TO-247-3
IXYS DMA80I1600HA	Standard Recovery >500ns	200 mA	175 ░C	-55 C	Through Hole	43 pF	80 A	40 µA	1.17 V	Standard	TO-247	TO-247-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1600 V 80A Through Hole TO-247 (IXTH)

Technical documentation and resources