TLP781F(D4GRL-T7,F

Obsolete

Toshiba Semiconductor and Storage

PHOTOCOUPLER

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

TLP781F(D4GRL-T7,F

Obsolete

Toshiba Semiconductor and Storage

PHOTOCOUPLER

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TLP781F(D4GRL-T7,F

Current - DC Forward (If) (Max) [Max]	60 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	200 %
Current Transfer Ratio (Min) [Min]	100 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	110 °C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	4-DIP
Rise / Fall Time (Typ) [custom]	3 µs
Rise / Fall Time (Typ) [custom]	2 µs
Supplier Device Package	4-DIP
Turn On / Turn Off Time (Typ)	3 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.15 V

TLP781F Series

Part	Number of Channels	Voltage - Forward (Vf) (Typ)	Mounting Type	Turn On / Turn Off Time (Typ)	Input Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - DC Forward (If) (Max) [Max]	Supplier Device Package	Current Transfer Ratio (Min) [Min]	Package / Case	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Output / Channel	Output Type	Current Transfer Ratio (Max)	Vce Saturation (Max) [Max]	Current Transfer Ratio (Max) [Max]
Toshiba Semiconductor and Storage TLP781F(D4GRT7TC,F	1	1.15 V	Through Hole	3 µs	DC	-55 °C	110 °C	60 mA	4-DIP	100 %	4-DIP	3 µs	2 µs	50 mA	1.81 mOhm	300 %	400 mV
Toshiba Semiconductor and Storage TLP781F(D4-BLL,F)	1	1.15 V	Through Hole	3 µs	DC	-55 °C	110 °C	60 mA	4-DIP	200 %	4-DIP	3 µs	2 µs	50 mA	1.81 mOhm	400 %	400 mV
Toshiba Semiconductor and Storage TLP781F(D4-Y,F)	1	1.15 V	Through Hole	3 µs	DC	-55 °C	110 °C	60 mA	4-DIP	50 %	4-DIP	3 µs	2 µs	50 mA	1.81 mOhm	150 %	400 mV
Toshiba Semiconductor and Storage TLP781F(D4-GRH,F)	1	1.15 V	Through Hole	3 µs	DC	-55 °C	110 °C	60 mA	4-DIP	150 %	4-DIP	3 µs	2 µs	50 mA	1.81 mOhm	300 %	400 mV
Toshiba Semiconductor and Storage TLP781F(D4-Y-TP7,F	1	1.15 V	Surface Mount	3 µs	DC	-55 °C	110 °C	60 mA	4-SMD	50 %	4-SMD Gull Wing	3 µs	2 µs	50 mA	1.81 mOhm	150 %	400 mV
Toshiba Semiconductor and Storage TLP781F(D4ADGBT7,F	1	1.15 V	Through Hole	3 µs	DC	-55 °C	110 °C	60 mA	4-DIP	100 %	4-DIP	3 µs	2 µs	50 mA	1.81 mOhm		400 mV	600 %
Toshiba Semiconductor and Storage TLP781F(D4GRL-T7,F	1	1.15 V	Through Hole	3 µs	DC	-55 °C	110 °C	60 mA	4-DIP	100 %	4-DIP	3 µs	2 µs	50 mA	1.81 mOhm	200 %	400 mV
Toshiba Semiconductor and Storage TLP781F(BL-LF7,F)	1	1.15 V	Surface Mount	3 µs	DC	-55 °C	110 °C	60 mA	4-SMD	200 %	4-SMD Gull Wing	3 µs	2 µs	50 mA	1.81 mOhm		400 mV	600 %
Toshiba Semiconductor and Storage TLP781F(D4-FUNGB,F	1	1.15 V	Through Hole	3 µs	DC	-55 °C	110 °C	60 mA	4-DIP	100 %	4-DIP	3 µs	2 µs	50 mA	1.81 mOhm		400 mV	600 %
Toshiba Semiconductor and Storage TLP781F(D4-FUN,F)	1	1.15 V	Through Hole	3 µs	DC	-55 °C	110 °C	60 mA	4-DIP	50 %	4-DIP	3 µs	2 µs	50 mA	1.81 mOhm		400 mV	600 %

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

TLP781F Series

Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP

Documents

Technical documentation and resources