PHOTOCOUPLER
| Part | Number of Channels | Voltage - Forward (Vf) (Typ) | Mounting Type | Turn On / Turn Off Time (Typ) | Input Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - DC Forward (If) (Max) [Max] | Supplier Device Package | Current Transfer Ratio (Min) [Min] | Package / Case | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Current - Output / Channel | Output Type | Current Transfer Ratio (Max) | Vce Saturation (Max) [Max] | Current Transfer Ratio (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1 | 1.15 V | Through Hole | 3 µs | DC | -55 °C | 110 °C | 60 mA | 4-DIP | 100 % | 4-DIP | 3 µs | 2 µs | 50 mA | 1.81 mOhm | 300 % | 400 mV | |
Toshiba Semiconductor and Storage | 1 | 1.15 V | Through Hole | 3 µs | DC | -55 °C | 110 °C | 60 mA | 4-DIP | 200 % | 4-DIP | 3 µs | 2 µs | 50 mA | 1.81 mOhm | 400 % | 400 mV | |
Toshiba Semiconductor and Storage | 1 | 1.15 V | Through Hole | 3 µs | DC | -55 °C | 110 °C | 60 mA | 4-DIP | 50 % | 4-DIP | 3 µs | 2 µs | 50 mA | 1.81 mOhm | 150 % | 400 mV | |
Toshiba Semiconductor and Storage | 1 | 1.15 V | Through Hole | 3 µs | DC | -55 °C | 110 °C | 60 mA | 4-DIP | 150 % | 4-DIP | 3 µs | 2 µs | 50 mA | 1.81 mOhm | 300 % | 400 mV | |
Toshiba Semiconductor and Storage | 1 | 1.15 V | Surface Mount | 3 µs | DC | -55 °C | 110 °C | 60 mA | 4-SMD | 50 % | 4-SMD Gull Wing | 3 µs | 2 µs | 50 mA | 1.81 mOhm | 150 % | 400 mV | |
Toshiba Semiconductor and Storage | 1 | 1.15 V | Through Hole | 3 µs | DC | -55 °C | 110 °C | 60 mA | 4-DIP | 100 % | 4-DIP | 3 µs | 2 µs | 50 mA | 1.81 mOhm | 400 mV | 600 % | |
Toshiba Semiconductor and Storage | 1 | 1.15 V | Through Hole | 3 µs | DC | -55 °C | 110 °C | 60 mA | 4-DIP | 100 % | 4-DIP | 3 µs | 2 µs | 50 mA | 1.81 mOhm | 200 % | 400 mV | |
Toshiba Semiconductor and Storage | 1 | 1.15 V | Surface Mount | 3 µs | DC | -55 °C | 110 °C | 60 mA | 4-SMD | 200 % | 4-SMD Gull Wing | 3 µs | 2 µs | 50 mA | 1.81 mOhm | 400 mV | 600 % | |
Toshiba Semiconductor and Storage | 1 | 1.15 V | Through Hole | 3 µs | DC | -55 °C | 110 °C | 60 mA | 4-DIP | 100 % | 4-DIP | 3 µs | 2 µs | 50 mA | 1.81 mOhm | 400 mV | 600 % | |
Toshiba Semiconductor and Storage | 1 | 1.15 V | Through Hole | 3 µs | DC | -55 °C | 110 °C | 60 mA | 4-DIP | 50 % | 4-DIP | 3 µs | 2 µs | 50 mA | 1.81 mOhm | 400 mV | 600 % |