1N914B A0G

Active

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 150MA DO35

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 150MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N914B A0G

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	150 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	720 mV

Part	Current - Average Rectified (Io)	Capacitance @ Vr, F	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology
Taiwan Semiconductor Corporation 1N914B A0G	150 mA	4 pF	Axial DO-204AH DO-35	100 V	4 ns	150 °C	-65 C	Through Hole	Any Speed	200 mA	DO-35	5 µA	720 mV	Standard
Taiwan Semiconductor Corporation 1N914BWS RRG	150 mA	4 pF	SC-90 SOD-323F	100 V	4 ns	150 °C	-65 C	Surface Mount	Any Speed	200 mA	SOD-323F	5 µA	1 V	Standard
Taiwan Semiconductor Corporation 1N914B	150 mA	4 pF	Axial DO-204AH DO-35	100 V	4 ns	150 °C	-65 C	Through Hole	Any Speed	200 mA	DO-35	5 µA	1 V	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 150mA Through Hole DO-35

Technical documentation and resources