1N914B

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Taiwan Semiconductor Corporation

DIODE STANDARD 100V 150MA DO35

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Taiwan Semiconductor Corporation

DIODE STANDARD 100V 150MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N914B

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	150 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Current - Average Rectified (Io)	Capacitance @ Vr, F	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology
Taiwan Semiconductor Corporation 1N914B A0G	150 mA	4 pF	Axial DO-204AH DO-35	100 V	4 ns	150 °C	-65 C	Through Hole	Any Speed	200 mA	DO-35	5 µA	720 mV	Standard
Taiwan Semiconductor Corporation 1N914BWS RRG	150 mA	4 pF	SC-90 SOD-323F	100 V	4 ns	150 °C	-65 C	Surface Mount	Any Speed	200 mA	SOD-323F	5 µA	1 V	Standard
Taiwan Semiconductor Corporation 1N914B	150 mA	4 pF	Axial DO-204AH DO-35	100 V	4 ns	150 °C	-65 C	Through Hole	Any Speed	200 mA	DO-35	5 µA	1 V	Standard

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General part information

Diode 100 V 150mA Through Hole DO-35

Technical documentation and resources

No documents available