VQ1006P

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET 4N-CH 90V 0.4A 14DIP

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET 4N-CH 90V 0.4A 14DIP

Technical Specifications

Parameters and characteristics for this part

Specification	VQ1006P

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	90 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	60 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	4.5 Ohm
Supplier Device Package	14-DIP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Power - Max [Max]	Configuration	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Technology	FET Feature
Vishay General Semiconductor - Diodes Division VQ1006P	-55 °C	150 °C	60 pF	90 V	Through Hole	14-DIP	2 W	4 N-Channel	4.5 Ohm	400 mA	2.5 V	MOSFET (Metal Oxide)	Logic Level Gate
Vishay General Semiconductor - Diodes Division VQ1006P-2	-55 °C	150 °C	60 pF	90 V	Through Hole	14-DIP	2 W	4 N-Channel	4.5 Ohm	400 mA	2.5 V	MOSFET (Metal Oxide)	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 90V 400mA 2W Through Hole 14-DIP

Technical documentation and resources

No documents available