VQ1006 Series

Catalog

MOSFET 4N-CH 90V 0.4A 14DIP

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Power - Max [Max]	Configuration	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Technology	FET Feature
Vishay General Semiconductor - Diodes Division VQ1006P	-55 °C	150 °C	60 pF	90 V	Through Hole	14-DIP	2 W	4 N-Channel	4.5 Ohm	400 mA	2.5 V	MOSFET (Metal Oxide)	Logic Level Gate
Vishay General Semiconductor - Diodes Division VQ1006P-2	-55 °C	150 °C	60 pF	90 V	Through Hole	14-DIP	2 W	4 N-Channel	4.5 Ohm	400 mA	2.5 V	MOSFET (Metal Oxide)	Logic Level Gate