2SK2719(F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 3A TO3P

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 3A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2719(F)

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	750 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	4.3 Ohm
Supplier Device Package	TO-3P(N)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Technology	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage 2SK2719(F)	MOSFET (Metal Oxide)	4.3 Ohm	N-Channel	900 V	125 W	TO-3P(N)	10 V	SC-65-3 TO-3P-3	150 °C	750 pF	Through Hole	30 V	3 A	25 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 3A (Ta) 125W (Tc) Through Hole TO-3P(N)

Technical documentation and resources