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MOSFET N-CH 900V 3A TO3P
| Part | Technology | Rds On (Max) @ Id, Vgs | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 4.3 Ohm | N-Channel | 900 V | 125 W | TO-3P(N) | 10 V | SC-65-3 TO-3P-3 | 150 °C | 750 pF | Through Hole | 30 V | 3 A | 25 nC |