TK60S06K3L(T6L1,NQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 60A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 60A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK60S06K3L(T6L1,NQ

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	88 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Toshiba Semiconductor and Storage TK60S06K3L(T6L1,NQ	60 V	88 W	Surface Mount	MOSFET (Metal Oxide)	8 mOhm	60 nC	3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	DPAK+	60 A	175 °C	6 V 10 V	2900 pF	20 V

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General part information

N-Channel 60 V 60A (Ta) 88W (Tc) Surface Mount DPAK+

Technical documentation and resources