Beta
⌘K
MOSFET N-CH 60V 60A DPAK
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Mounting Type | Technology | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Package / Case | FET Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 60 V | 88 W | Surface Mount | MOSFET (Metal Oxide) | 8 mOhm | 60 nC | 3 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | DPAK+ | 60 A | 175 °C | 6 V 10 V | 2900 pF | 20 V |