TPC6109-H(TE85L,FM

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 5A VS-6

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Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 5A VS-6

Technical Specifications

Parameters and characteristics for this part

Specification	TPC6109-H(TE85L,FM

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12.3 nC
Input Capacitance (Ciss) (Max) @ Vds	490 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs [Max]	59 mOhm
Supplier Device Package	VS-6 (2.9x2.8)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.2 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature	Vgs(th) (Max) @ Id	Technology
Toshiba Semiconductor and Storage TPC6109-H(TE85L,FM	5 A	490 pF	700 mW	P-Channel	20 V	30 V	12.3 nC	59 mOhm	SOT-23-6 Thin TSOT-23-6	Surface Mount	4.5 V 10 V	VS-6 (2.9x2.8)	150 °C	1.2 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8)

Technical documentation and resources