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MOSFET P-CH 30V 5A VS-6
| Part | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | FET Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Operating Temperature | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 5 A | 490 pF | 700 mW | P-Channel | 20 V | 30 V | 12.3 nC | 59 mOhm | SOT-23-6 Thin TSOT-23-6 | Surface Mount | 4.5 V 10 V | VS-6 (2.9x2.8) | 150 °C | 1.2 V | MOSFET (Metal Oxide) |