GB02SHT03-46

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GeneSiC Semiconductor

DIODE SIL CARBIDE 300V 4A TO46

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GeneSiC Semiconductor

DIODE SIL CARBIDE 300V 4A TO46

Technical Specifications

Parameters and characteristics for this part

Specification	GB02SHT03-46

Capacitance @ Vr, F	76 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	225 °C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-206AB, TO-46-3 Metal Can
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-46
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	300 V

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Speed	Technology	Reverse Recovery Time (trr)	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Mounting Type
GeneSiC Semiconductor GB02SHT03-46	TO-206AB TO-46-3 Metal Can	300 V	5 µA	76 pF	No Recovery Time	SiC (Silicon Carbide) Schottky	0 ns	TO-46	-55 C	225 °C	4 A	Through Hole

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General part information

Diode 300 V 4A Through Hole TO-46

Technical documentation and resources