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DIODE SIL CARBIDE 300V 4A TO46
| Part | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Speed | Technology | Reverse Recovery Time (trr) | Supplier Device Package | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Average Rectified (Io) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | TO-206AB TO-46-3 Metal Can | 300 V | 5 µA | 76 pF | No Recovery Time | SiC (Silicon Carbide) Schottky | 0 ns | TO-46 | -55 C | 225 °C | 4 A | Through Hole |