71V65703S80BQG

Obsolete

Renesas Electronics Corporation

3.3V 256K X 36 ZBT SYNCHRONOUS 3.3V I/O FLOW-THROUGH SRAM

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71V65703S80BQG

Obsolete

Renesas Electronics Corporation

3.3V 256K X 36 ZBT SYNCHRONOUS 3.3V I/O FLOW-THROUGH SRAM

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	71V65703S80BQG

Access Time	8 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization [custom]	36
Memory Organization [custom]	256 K
Memory Size	9 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	165-TBGA
Supplier Device Package	165-CABGA (13x15)
Technology	SRAM - Synchronous, SDR (ZBT)
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

71V65703 Series

3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flow-Through SRAM

Part	Memory Type	Supplier Device Package	Memory Format	Mounting Type	Memory Organization [custom]	Memory Organization [custom]	Memory Interface	Memory Size	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Access Time	Technology	Voltage - Supply [Max]	Voltage - Supply [Min]
Renesas Electronics Corporation 71V65703S75BGG	Volatile	119-PBGA (14x22)	SRAM	Surface Mount	36	256 K	Parallel	9 Mbit	70 °C	0 °C	119-BGA	7.5 ns	SRAM - Synchronous SDR (ZBT)	3.465 V	3.135 V
Renesas Electronics Corporation 71V65703S80BQG	Volatile	165-CABGA (13x15)	SRAM	Surface Mount	36	256 K	Parallel	9 Mbit	70 °C	0 °C	165-TBGA	8 ns	SRAM - Synchronous SDR (ZBT)	3.465 V	3.135 V
Renesas Electronics Corporation 71V65703S80BG	Volatile	119-PBGA (14x22)	SRAM	Surface Mount	36	256 K	Parallel	9 Mbit	70 °C	0 °C	119-BGA	8 ns	SRAM - Synchronous SDR (ZBT)	3.465 V	3.135 V
Renesas Electronics Corporation 71V65703S80BQGI	Volatile	165-CABGA (13x15)	SRAM	Surface Mount	36	256 K	Parallel	9 Mbit	85 °C	-40 °C	165-TBGA	8 ns	SRAM - Synchronous SDR (ZBT)	3.465 V	3.135 V
Renesas Electronics Corporation 71V65703S80BQ	Volatile	165-CABGA (13x15)	SRAM	Surface Mount	36	256 K	Parallel	9 Mbit	70 °C	0 °C	165-TBGA	8 ns	SRAM - Synchronous SDR (ZBT)	3.465 V	3.135 V
Renesas Electronics Corporation 71V65703S80PFGI	Volatile	100-TQFP (14x14)	SRAM	Surface Mount	36	256 K	Parallel	9 Mbit	85 °C	-40 °C	100-LQFP	8 ns	SRAM - Synchronous SDR (ZBT)	3.465 V	3.135 V
Renesas Electronics Corporation 71V65703S80BGG	Volatile	119-PBGA (14x22)	SRAM	Surface Mount	36	256 K	Parallel	9 Mbit	70 °C	0 °C	119-BGA	8 ns	SRAM - Synchronous SDR (ZBT)	3.465 V	3.135 V
Renesas Electronics Corporation 71V65703S80BQGI8	Volatile	165-CABGA (13x15)	SRAM	Surface Mount	36	256 K	Parallel	9 Mbit	85 °C	-40 °C	165-TBGA	8 ns	SRAM - Synchronous SDR (ZBT)	3.465 V	3.135 V
Renesas Electronics Corporation 71V65703S85BQI8	Volatile	165-CABGA (13x15)	SRAM	Surface Mount	36	256 K	Parallel	9 Mbit	85 °C	-40 °C	165-TBGA		SRAM - Synchronous SDR (ZBT)	3.465 V	3.135 V
Renesas Electronics Corporation 71V65703S75PFG	Volatile	100-TQFP (14x14)	SRAM	Surface Mount	36	256 K	Parallel	9 Mbit	70 °C	0 °C	100-LQFP	7.5 ns	SRAM - Synchronous SDR (ZBT)	3.465 V	3.135 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71V65703 Series

The 71V65703 3.3V CMOS SRAM, organized as 256K x 36, is designed to eliminate dead bus cycles when turning the bus around between reads and writes or writes and reads. Thus it has been given the name ZBT™, or Zero Bus Turnaround. The 71V65703 contains address, data-in, and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.

Documents

Technical documentation and resources

Datasheet

IDT Suffixes

Datasheet

71V65703/903 Datasheet

Datasheet