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71V65703S75BGG - 119-BGA

71V65703S75BGG

Obsolete
Renesas Electronics Corporation

IC SRAM 9MBIT PARALLEL 119PBGA

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71V65703S75BGG - 119-BGA

71V65703S75BGG

Obsolete
Renesas Electronics Corporation

IC SRAM 9MBIT PARALLEL 119PBGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification71V65703S75BGG
Access Time7.5 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization [custom]36
Memory Organization [custom]256 K
Memory Size9 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case119-BGA
Supplier Device Package119-PBGA (14x22)
TechnologySRAM - Synchronous, SDR (ZBT)
Voltage - Supply [Max]3.465 V
Voltage - Supply [Min]3.135 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 13$ 24.84

Description

General part information

71V65703 Series

The 71V65703 3.3V CMOS SRAM, organized as 256K x 36, is designed to eliminate dead bus cycles when turning the bus around between reads and writes or writes and reads. Thus it has been given the name ZBT™, or Zero Bus Turnaround. The 71V65703 contains address, data-in, and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.

Documents

Technical documentation and resources