TK25N60X,S1F

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A TO247

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	TK25N60X,S1F

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TK25N60X,S1F	MOSFET (Metal Oxide)	Through Hole	N-Channel	40 nC	30 V	2400 pF	3.5 V	180 W	25 A	150 °C	125 mOhm	TO-247-3	TO-247	10 V	600 V

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General part information

N-Channel 600 V 25A (Ta) 180W (Tc) Through Hole TO-247

Technical documentation and resources