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MOSFET N-CH 600V 25A TO247
| Part | Technology | Mounting Type | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Rds On (Max) @ Id, Vgs | Package / Case | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | Through Hole | N-Channel | 40 nC | 30 V | 2400 pF | 3.5 V | 180 W | 25 A | 150 °C | 125 mOhm | TO-247-3 | TO-247 | 10 V | 600 V |