TK60F10N1L,LXGQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 60A TO220SM

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 60A TO220SM

Technical Specifications

Parameters and characteristics for this part

Specification	TK60F10N1L,LXGQ

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	4320 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	205 W
Supplier Device Package	TO-220SM(W)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TK60F10N1L,LXGQ	3.5 V	175 °C	4320 pF	MOSFET (Metal Oxide)	205 W	60 nC	60 A	Surface Mount	6 V 10 V	TO-220SM(W)	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	100 V

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General part information

N-Channel 100 V 60A (Ta) 205W (Tc) Surface Mount TO-220SM(W)

Technical documentation and resources