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MOSFET N-CH 100V 60A TO220SM
| Part | Vgs(th) (Max) @ Id | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Package / Case | Vgs (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 3.5 V | 175 °C | 4320 pF | MOSFET (Metal Oxide) | 205 W | 60 nC | 60 A | Surface Mount | 6 V 10 V | TO-220SM(W) | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | 100 V |