TK6Q60W,S1VQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 6.2A IPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 6.2A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK6Q60W,S1VQ

Current - Continuous Drain (Id) @ 25°C	6.2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	390 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	820 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Power Dissipation (Max)
Toshiba Semiconductor and Storage TK6Q60W,S1VQ	12 nC	600 V	390 pF	30 V	10 V	TO-251-3 Stub Leads IPAK	MOSFET (Metal Oxide)	820 mOhm	3.7 V	150 °C	N-Channel	6.2 A	IPAK	Through Hole	60 W

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General part information

N-Channel 600 V 6.2A (Ta) 60W (Tc) Through Hole IPAK

Technical documentation and resources