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⌘K
MOSFET N-CH 600V 6.2A IPAK
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Technology | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Operating Temperature | FET Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Mounting Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 12 nC | 600 V | 390 pF | 30 V | 10 V | TO-251-3 Stub Leads IPAK | MOSFET (Metal Oxide) | 820 mOhm | 3.7 V | 150 °C | N-Channel | 6.2 A | IPAK | Through Hole | 60 W |