TK20C60W,S1VQ

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A I2PAK

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK20C60W,S1VQ

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	165 W
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Mounting Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Toshiba Semiconductor and Storage TK20C60W,S1VQ	Through Hole	165 W	10 V	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	20 A	30 V	150 °C	600 V	3.7 V	1680 pF	MOSFET (Metal Oxide)	48 nC	I2PAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 20A (Ta) 165W (Tc) Through Hole I2PAK

Technical documentation and resources

No documents available