Beta
⌘K
MOSFET N-CH 600V 20A I2PAK
| Part | Mounting Type | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Through Hole | 165 W | 10 V | I2PAK TO-262-3 Long Leads TO-262AA | N-Channel | 20 A | 30 V | 150 °C | 600 V | 3.7 V | 1680 pF | MOSFET (Metal Oxide) | 48 nC | I2PAK |