UF3SC065030D8S

Obsolete

ON Semiconductor

SICFET N-CH 650V 18A 4DFN

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Obsolete

ON Semiconductor

SICFET N-CH 650V 18A 4DFN

Technical Specifications

Parameters and characteristics for this part

Specification	UF3SC065030D8S

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	12 V, 12 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max) [Max]	179 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	4-DFN (8x8)
Technology	SiCFET (Cascode SiCJFET)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id [Max]	6 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Vgs(th) (Max) @ Id [Max]	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor UF3SC065030D8S	42 mOhm	4-DFN (8x8)	43 nC	12 V 12 V	179 W	18 A	Surface Mount	25 V	1500 pF	4-PowerTSFN	N-Channel	6 V	SiCFET (Cascode SiCJFET)	650 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 18A (Tc) 179W (Tc) Surface Mount 4-DFN (8x8)

Technical documentation and resources

No documents available