CSICD10-1200 TR13

Obsolete

Central Semiconductor Corp

DIODE SIL CARBIDE 1.2KV 10A DPAK

Search across all available documentation for this part.

Obsolete

Central Semiconductor Corp

DIODE SIL CARBIDE 1.2KV 10A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	CSICD10-1200 TR13

Capacitance @ Vr, F	500 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Supplier Device Package	Capacitance @ Vr, F	Speed	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Technology
Central Semiconductor Corp CSICD10-1200 TR13	DPAK	500 pF	No Recovery Time	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 ░C	-55 C	Surface Mount	250 µA	1.2 kV	10 A	1.7 V	0 ns	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 10A Surface Mount DPAK

Technical documentation and resources