DIODE SIL CARBIDE 1.2KV 10A DPAK
| Part | Supplier Device Package | Capacitance @ Vr, F | Speed | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Central Semiconductor Corp | DPAK | 500 pF | No Recovery Time | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 175 ░C | -55 C | Surface Mount | 250 µA | 1.2 kV | 10 A | 1.7 V | 0 ns | SiC (Silicon Carbide) Schottky |