2SK3309(Q)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 10A TO220FL

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 10A TO220FL

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3309(Q)

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	920 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	650 mOhm
Supplier Device Package	TO-220FL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Operating Temperature	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage 2SK3309(TE24L,Q)	650 mOhm	23 nC	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	920 pF	10 A	MOSFET (Metal Oxide)	N-Channel	150 °C	65 W	30 V	TO-220SM	450 V
Toshiba Semiconductor and Storage 2SK3309(Q)	650 mOhm	23 nC	10 V	TO-220-3 Short Tab	Through Hole	920 pF	10 A	MOSFET (Metal Oxide)	N-Channel	150 °C	65 W	30 V	TO-220FL	450 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 450 V 10A (Ta) 65W (Tc) Through Hole TO-220FL

Technical documentation and resources