Beta
⌘K
MOSFET N-CH 450V 10A TO220SM
| Part | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | FET Type | Operating Temperature | Power Dissipation (Max) | Vgs (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 650 mOhm | 23 nC | 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount | 920 pF | 10 A | MOSFET (Metal Oxide) | N-Channel | 150 °C | 65 W | 30 V | TO-220SM | 450 V |
Toshiba Semiconductor and Storage | 650 mOhm | 23 nC | 10 V | TO-220-3 Short Tab | Through Hole | 920 pF | 10 A | MOSFET (Metal Oxide) | N-Channel | 150 °C | 65 W | 30 V | TO-220FL | 450 V |