PJD9P06A-AU_L2_000A1

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJD9P06A-AU_L2_000A1

Current - Continuous Drain (Id) @ 25°C	7 A, 2.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	15.6 W, 2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Grade	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs
Panjit International Inc. PJD9P06A-AU_L2_000A1	2 W 15.6 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	20 V	TO-252AA	Automotive	4.5 V 10 V	430 pF	AEC-Q101	MOSFET (Metal Oxide)	60 V	2.5 A 7 A	-55 °C	150 °C	Surface Mount	8.3 nC	170 mOhm	P-Channel
Panjit International Inc. PJD9N10A_L2_00001	2 W 31 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	20 V	TO-252AA		4.5 V 10 V	1021 pF		MOSFET (Metal Oxide)	100 V	2.4 A 9 A	-55 °C	150 °C	Surface Mount		152 mOhm	N-Channel	19 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 2.5A (Ta), 7A (Tc) 2W (Ta), 15.6W (Tc) Surface Mount TO-252AA

Technical documentation and resources