Beta
⌘K
60V P-CHANNEL ENHANCEMENT MODE M
| Part | Power Dissipation (Max) | Package / Case | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package | Grade | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 2 W 15.6 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.5 V | 20 V | TO-252AA | Automotive | 4.5 V 10 V | 430 pF | AEC-Q101 | MOSFET (Metal Oxide) | 60 V | 2.5 A 7 A | -55 °C | 150 °C | Surface Mount | 8.3 nC | 170 mOhm | P-Channel | |
Panjit International Inc. | 2 W 31 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.5 V | 20 V | TO-252AA | 4.5 V 10 V | 1021 pF | MOSFET (Metal Oxide) | 100 V | 2.4 A 9 A | -55 °C | 150 °C | Surface Mount | 152 mOhm | N-Channel | 19 nC |