MBR60035CTRL

Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 35V 300A 2TOWER

Search across all available documentation for this part.

Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 35V 300A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR60035CTRL

Current - Average Rectified (Io) (per Diode)	300 A
Current - Reverse Leakage @ Vr	3 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	35 V
Voltage - Forward (Vf) (Max) @ If	600 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology	Mounting Type
GeneSiC Semiconductor MBR60035CT	150 °C	-55 °C	200 mA 500 ns	35 V	300 A	1 Pair Common Cathode	1 mA	Twin Tower	Twin Tower	750 mV	Schottky	Chassis Mount
GeneSiC Semiconductor MBR60035CTL	150 °C	-55 °C	200 mA 500 ns	35 V	300 A	1 Pair Common Cathode	3 mA	Twin Tower	Twin Tower	600 mV	Schottky	Chassis Mount
GeneSiC Semiconductor MBR60035CTRL	150 °C	-55 °C	200 mA 500 ns	35 V	300 A	1 Pair Common Anode	3 mA	Twin Tower	Twin Tower	600 mV	Schottky	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Anode 35 V 300A Chassis Mount Twin Tower

Technical documentation and resources

No documents available